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Chemistry

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The chemical part of the clean room consist of 4 fume and 1 laminar flow hood, equipped with hot plates, ultrasonic cleaner, pure nitrogen gas for drying samples and finally deionized water to 18MΏ/cm².

Acid fume hood
© CNRS Photothèque / Cyril Frésillon


-  2 Solvent fume : one for cleaning wafer and the other for lift-off
The main solvent used are :

  • Aceton
  • Isopropanol
  • Trichloroetylen
  • Dichloromethan

- 2 Acid fume : For wet etching of metal and semi-conductors
The main Acid available are :

© CNRS Photothèque / Cyril Frésillon
Name
Formula
Acetic Acid
C2H4O2
Hydrobromic Acid
HBr
Hydrochloric Acid
HCl
Citric Acid
Hydrofluoric Acid
HF
Nitric Acid
HNO3
Orthophosphoric Acid
H3PO4
Sulfuric Acid
H2SO4
Potassium Dichromate
K2Cr2O7
Ammonium Fluoride
NH4F
Buffered Oxid Etch 7-1
NH4F : HF
Aluminium Etch solution
Chrome Etch solution
Gold Etch solution
Aqua Regia or KI:I2


- 1 Laminar flow hood for Basis : for the etching of semiconductor or cleaning
The main basis available are :

Name
Formula
Ammonium hydroxide
NH4OH
Sodium hydroxide
NaOH
Potassium hydroxide
KOH



Examples of acid etching of III-V materials performed in the cleanroom :
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