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Plasma Etching

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Our Etching area is coumposed by 3 main equipments, we have the possibility of etching several semiconductor from silicon to III-V materials.

- ICP-RIE Plasma Etcher [1] - Sentech SI500 : for the etching of III-V coumpounds (GaAs, AlGaAs, InGaAs or InP)

ICP-RIE Sentech SI 500
© Phototèque CNRS - C. Frésillon

QCL dry etching

This Inductively Coupled Plasma - Reactive Ion Etching system permit us to etch deeply semiconductor III-V coumponds (several µm) for a maximum sample size of 3 inches (7.5cm).
For this, we use Clhorinated gases SiCl4 (or in some case HBr) combine with Ar and/or O2.
The end of the etching can be monitorised with an interferometric laser camera.




- A RIE Etching [2] - Corial 200R : for the etching of Silicon oxide or nitride

RIE CORIAL 200R
© photo H. De Brus

SiO2 bridge

This Reactive Ion Etcher system permit us to etch material like silicon nitride or oxide, Aluminium, Niobium, Silicon and organic residus for a maximum sample size of 4 inches (10cm).
For this, we use Fluorated gases (SF6 or CHF3) combine with O2.
The end of the etching can be monitorised with an interferometric laser camera.




- Plasma O2/Ar - Diener Electronics Pico : for stripping resist and organic residues

Plasma Cleaner
© Photo H. De Brus

Cleaning step is the main step of semiconductor processes, this plasma cleaner is a part of our standard cleaning procedure, it remove small dust or organic residus.
It could also be use to activate some polimeric surface in order to transform a surface hydrophibic or hydrophilic


[1(Inductively Coupled Plasma - Reactive Ion Etching)

[2(Reactive Ion Etching)